【摘 要】
：
借助晶界的调控和修饰提高氧离子导体YSZ的电导率具有重要意义。本文采用射频磁控溅射工艺在单晶Al2O3衬底上制备了厚度约为4um、具有柱状晶结构的氧化钇稳定氧化锆(YSZ)
【机 构】
：
昆明理工大学,材料科学与工程学院,昆明650093
【出 处】
：
2014中国溶胶-凝胶学术研讨会暨国际论坛
论文部分内容阅读
借助晶界的调控和修饰提高氧离子导体YSZ的电导率具有重要意义。本文采用射频磁控溅射工艺在单晶Al2O3衬底上制备了厚度约为4um、具有柱状晶结构的氧化钇稳定氧化锆(YSZ)涂层,利用溶胶凝胶工艺在涂层表面涂覆含Fe3+、Co2+、Si4+等离子的扩散源,在一定温度下对上述离子进行热扩散处理使其沿晶界扩散,研究不同离子的引入对YSZ涂层电导率的影响。溶胶前驱体粉末的TG-DTA分析确定了涂覆处理后的热扩散处理工艺,采用XRD、SEM以及TEM对涂层以及溶胶的形貌、结构和物相进行测试,采用直流四探针法和交流阻抗谱法对涂层热扩散处理前后的电导率进行了测试。结果表明引入Si4+的样品电导率降低,在此基础上引入Fe3+的样品电导率提高,引入Co2+的样品电导率变化不大。引入Fe3+的样品电导率提高的主要原因是Fe3+能够清除YSZ晶界处的Si质相,O2-传输通道打开。
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