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5. Influence of Argon/Hydrogen ratio on phosphorus-doped characteristics of n-type hydrogenated nanocry

Influence of Argon/Hydrogen ratio on phosphorus-doped characteristics of n-type hydrogenated nanocry

来源 :2011年第三届微电子及等离子体技术国际会议 | 被引量 : 0次 | 上传用户：gaorongqing

【摘 要】

：

Impurities play a central role in semiconductor technology.As semiconductor devices move towards nano-scale dimensions,doping of semiconductor nanocrystals continues to gain interest as a research top

【作 者】

：

Zhang Xue-yu Wu Ai-min Shi Shao-fei 

【机 构】

：

Key Laboratory of Materials Modification(Dalian University of Technology), Ministry of Education,Dal

【出 处】

：

2011年第三届微电子及等离子体技术国际会议

【发表日期】

：

2011年9期

【关键词】

：

Ar/H n-type nc-Si:H ECR-PECVD FTIR 

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Impurities play a central role in semiconductor technology.As semiconductor devices move towards nano-scale dimensions,doping of semiconductor nanocrystals continues to gain interest as a research topic.

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