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Arsenic-doped ZnO films were fabricated by radio frequency magnetron sputtering method with different substrate temperature Ts.Growing with the low substr ate temperature of Ts=200℃ yielded n-type semi-insulating sample.Increasing the substrate temperature would yield p-type ZnO film and reproducible p-type film could be produced at Ts~450℃.500℃ post-growth annealing the n-type As-doped ZnO sample grown at the low substrate temperature (Ts=200℃) in air also converted the film to p-type conductivity.