【摘 要】
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The residual stress of silicon-doped CVD diamond films with various SiC/C ratios are evaluated using both X-ray diffraction analysis and Raman spectroscopy
【出 处】
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2012 Postdoctoral Symposium of China on Materials Science &a
论文部分内容阅读
The residual stress of silicon-doped CVD diamond films with various SiC/C ratios are evaluated using both X-ray diffraction analysis and Raman spectroscopy measurements.The examined Si-doped diamond films are deposited on WC-Co substrate in a home-made bias-enhanced HFCVD apparatus.Si(OC2H5)4 is dissolved in acetone to obtain the desired Si/C in the reaction gas varying from 1000ppm to 14000ppm.It can be observed from the SEM and XRD spectra that the grain size decreases and the [110] texture becomes dominant as the silicon concentration increases.
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