本文阐述了a-Si:H薄膜样品的制备条件和实验观测条件,通过动态观测获得了非晶硅、微晶硅与多晶硅之间的转变点参数,从微结构的观点对样品作了分类,对各种微结构作了统一的理论分析,提出了一种可能的生长机理。这些结果对非晶硅材料的深入了解及其应用是至关重要的。 In this paper, the fabrication conditions and experimental conditions of a-Si: H thin film samples are described. The parameters of the transition point between amorphous silicon, microcrystalline silicon and polycrystalline silicon are obtained by dynamic observation. The samples are classified from the microstructure point of view, Made a unified theoretical analysis of various microstructures, and proposed a possible growth mechanism. These results are of crucial importance for the in-depth understanding of amorphous silicon materials and their applications.