2. 您的位置
3. 首页
4. 会议论文
5. Carbon Thin Film Deposition using a Remote Plasma Graphite Sputtering

Carbon Thin Film Deposition using a Remote Plasma Graphite Sputtering

来源 :2011年第三届微电子及等离子体技术国际会议 | 被引量 : 0次 | 上传用户：syh904

【摘 要】

：

Hydrogen-free amorphous carbon (a-C) films were deposited by a high density plasma assisted sputtering source (HiPASS).The HiPASS transports a high density (＞1013cm-3) Ar plasma from plasma source to

【作 者】

：

Seunghun Lee Jae-Woon Kim Chang-Su Kim Jae-Wook Kang Jong-Kuk Kim Do-Geun Kim 

【机 构】

：

KIMS, 797 Changwondae-ro, Changwon, 641-831, South Korea

【出 处】

：

2011年第三届微电子及等离子体技术国际会议

【发表日期】

：

2011年9期

【关键词】

：

Remote Plasma Sputtering Hollow Cathode Discharge 

下载到本地 , 更方便阅读

下载此文 赞助VIP

声明 : 本文档内容版权归属内容提供方 , 如果您对本文有版权争议 , 可与客服联系进行内容授权或下架

论文部分内容阅读

Hydrogen-free amorphous carbon (a-C) films were deposited by a high density plasma assisted sputtering source (HiPASS).The HiPASS transports a high density (＞1013cm-3) Ar plasma from plasma source to sputtering cathode.

其他文献

Structure and Luminescence Properties of Ag-implanted ZnO Nanowires

Recently,Ag-doped one-dimensional (1D) ZnO Nanomaterial has been reported to be able to fabricate field effect transistor,gas sensor,diodes with all-ZnO-based p-n junctions,etc.

会议

ZnO nanowiresion implantationStructurePhotoluminescence

Structural and Electrical Properties of the Low-k SiOC(-H) Film Prepared with Plasma-Enhanced Atomic

SiOC(-H) thin films with low-dielectric-constant have been prepared by using plasma-enhanced atomic layer deposition.I-V and C-V characteristics of the SiOC(-H) films were measured for the meatal-insu

会议

Low-k materialsSiOC(-H) filmsPEALDUV treatmentFTIR

Evaluation of Performance and Reliability of p-type Metal-Oxide-Semiconductor Field Effect Transisto

The scaling down of metal-oxide-semiconductor field effect transistors (MOSFETs) through successful gate-last integration of high-k dielectric and metal electrodes in gate stacks for high-performance

会议

MOSFETmetal gatehigh-k dielectricsNBTI

Effects of the UV Treated SiCN Capping Layer on the SiOC(-H) Film Prepared by Plasma-Enhanced Atomic

Multilevel interconnection structures comprising of low-k films with inlaid copper wires in a dual damascene process have been identified as the new generation technology in the National Technology Ro

会议

Low-k materialsSiCN filmsPEALDUV treatmentFTIR

Lateral growth of ZnO nanorod and its UV photoresponse

ZnO seed layer was deposited on glass by oblique angle sputtering method and Cr thin film as a metal barrier was patterned by lift-off technique.

会议

ZnO nanorodLateral growthPhotoresponseHydrothermal

Effect of Electrode Configuration on the Mixing Performance of the Electroosmotic Micromixer

The micromixer that is applied for the electroosmotic effect in this study takes two fluids from different inlets and combines them into a single channel and these are mixed by electric fields in the

会议

MicrofluidicsElectroosmotic effectElectrode positionMicromixer

The Effects of Plasma Atomic Layer Deposited TiN on MOS device: deposition temperature, capping and

Recently,3D device structure with high-k gate dielectric/metal gate (HKMG) such as Tri-Gate transistor for 22nm node technology was reported to enhance performance and lower power dissipation.

会议

Plasma ALDTiNFlatband Voltage

Effect of dc sputtering parameter of molybdenum on galvanic reaction between molybdenum and copper t

Molybdenum and its alloys are extensively utilized in thin film transistor industry for copper metallization because of their high thermal stability,good electrical conductivity and adhesion with glas

会议

MolybdenumCopper Thin FilmsGalvanic ReactionResidual Stress

Effects of Annealing Temperature and Interfacial Oxide Thickness on Layer Exchange Metal-induced Cry

Synthesis methods for high quality polycrystalline Ge have recently been researched for the application of thin film transistors and solar cells.

会议

MICPoly-Geand Layer Exchange

Dopant-dependence of One-step Metal-induced Dopant Activation Process in Silicon

Source/drain (S/D) thermal formation is a strenuous issue on a single crystalline Si (s-Si) for the application of LCD and 3D integration because the minimum temperature required for S/D activation is

会议

MICPoly-Siand One-step