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A high-permittivity (high-k) material is applied as the gate dielectric layer in a silicon metal-oxidesemiconductor(MOS) capacitor to form a special electro-optic (EO) modulator.Both induced chargedensity and modulation efficiency in the proposed modulator are improved due to the special structuredesign and the application of the high-k material.The device has an ultra-compact dimension of 691 μmin length.
A high-permittivity (high-k) material is applied as the gate dielectric layer in a silicon metal-oxide semiconductor (MOS) capacitor to form a special electro-optic (EO) modulator.Both induced chargedensity and modulation efficiency in the proposed modulator are improved due to the special structure design and the application of the high-k material. the device has an ultra-compact dimension of 691 μmin length.