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在超高真空条件下,通过脉冲激光沉积(PLD)技术制作了Er_2O_3/Al_2O_3/Si多层薄膜结构,原位条件下利用X射线光电子能谱(XPS)研究了Al_2O_3作为势垒层的Er_2O_3与Si界面的电子结构。XPS结果表明,Al_2O_3中Al的2p芯能级峰在低、高温退火前后没有变化;Er的4d芯能级峰来自于硅酸铒中的铒,并非全是本征氧化铒薄膜中的铒;衬底硅的芯能级峰在沉积Al_2O_3时没有变化,说明Al_2O_3薄膜从沉积到退火不参与任何反应,与Si界面很稳定;在沉积Er_2O_3薄膜和退火过程中,有硅化物生成,表明Er_2O_3与Si的界面不太稳定,但随着Al_2O_3薄膜厚度的增加,其硅化物中硅的峰强减弱,含量减少,说明势垒层很好地起到了阻挡扩散的作用。
The Er 2 O 3 / Al 2 O 3 / Si multilayer thin film structure was fabricated by pulsed laser deposition (PLD) under ultrahigh vacuum. X-ray photoelectron spectroscopy (XPS) was used to investigate the effect of Er 2 O 3 Electronic Structure of Si Interface. XPS results show that the 2p core level peaks of Al in Al 2 O 3 did not change before and after low and high temperature annealing. The 4d core level peak of Er originated from erbium in erbium silicate, not all erbium in intrinsic erbium oxide film. Substrate silicon core level peak in the deposition of Al_2O_3 did not change, indicating that Al_2O_3 film from deposition to annealing does not participate in any reaction, and the Si interface is very stable; Er_2O_3 thin film deposition and annealing process, the formation of silicide, indicating Er_2O_3 and The interface of Si is not stable, but with the increase of Al 2 O 3 film thickness, the peak intensity of silicon in the silicide is weakened and the content is reduced, indicating that barrier layer plays a good role in blocking diffusion.