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等离子增强型化学汽相淀积氮化硅(简称PECVD氮化硅),由于具有生长设备简单、淀积温度低、钝化性能好的特点,正在逐步成为半导体器件钝化中的标准工艺之一.关于它的生长设备、工艺情况,已有资料报导,这里将它的钝化性能及在半导体器件钝化中的具体应用,作进一步研究.用于器件钝化的主要工艺流程是:在经过合金化以后的芯片上,生长2000～4000A厚的PECVD氮化硅,然后光刻键压点,可用HF缓冲液进行湿法腐蚀,也可用等离子体CF_4+O_2进行干法腐蚀.根据我们的试验情况,干法腐蚀效果好,且容易控制.
Plasma Enhanced Chemical Vapor Deposition of Silicon Nitride (referred to as PECVD silicon nitride), due to its simple growth equipment, low deposition temperature and good passivation performance, is gradually becoming one of the standard processes for the passivation of semiconductor devices For its growth equipment, process conditions, there are data reported here to passivation performance and semiconductor device in the specific application of passivation for further research.The main passivation process for the device is: after the After the alloying process, PECVD silicon nitride with a thickness of 2000-4000 A was grown on the chip, and then lithography was performed on the chip with wet etching by HF buffer or dry etching by plasma CF 4 + O 2. According to our experiment Situation, dry etching effect is good, and easy to control.