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用射频(RF)反应磁控溅射法,在硅基片上制备出了具有较低表面粗糙度、C轴择优取向的AlN压电薄膜.讨论了溅射功率对AlN压电薄膜结构和形貌的影响、氮气含量对AlN压电薄膜成分的影响以及低温退火对薄膜表面粗糙度的影响.XRD和SEM结果表明:随溅射功率增大,AlN压电薄膜C轴择优取向增强;当功率为350W时,AlN压电薄膜(002)面摇摆曲线半高宽为4.5°,薄膜表现出明显的柱状结构.EDS成分分析表明:随氮气含量的提高,AlN压电薄膜的元素比接近于化学计量比.低温退火工艺的引入将薄膜表面的均方根粗糙度由4.8nm降低到2.26nm.
The AlN piezoelectric thin films with lower surface roughness and C-axis preferred orientation were prepared by radio frequency (RF) reactive magnetron sputtering. The effects of sputtering power on the structure and morphology of AlN piezoelectric thin films The effect of nitrogen content on the composition of AlN piezoelectric thin films and the effect of low temperature annealing on the surface roughness of the films were investigated.The results of XRD and SEM show that the preferred orientation of C axis of AlN piezoelectric thin films increases with the increase of sputtering power, 350W, the full width at half maximum (FWHM) of AlN piezoelectric film (002) is 4.5 °, and the film shows obvious columnar structure.The analysis of EDS shows that with the increase of nitrogen content, the elemental ratio of AlN piezoelectric film is close to stoichiometry The introduction of the low temperature annealing process reduced the root mean square roughness of the film surface from 4.8 nm to 2.26 nm.