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利用时域有限差分(FDTD)方法对微波脉冲与孔阵矩形腔体的耦合过程进行了数值模拟研究.当孔缝阵中的孔缝长边垂直于入射电场方向时,详细分析了微波脉冲与孔缝阵矩形腔体的耦合过程中孔阵面上各个孔缝中心点的电场分布情况.结果表明,在平行于入射电场方向上排列的孔缝中,处在中心的孔缝场增强效应最弱,孔缝场增强效应由中心向两侧依次对称的增强;在垂直于入射电场方向上排列的孔缝中,处在中心的孔缝场增强效应最强,孔缝场增强效应由中心向两边依次对称的减弱.同时,讨论了孔缝孔阵中孔缝个数、间隔等因素对各孔缝中心点的场增强效应和腔体内的耦合场分布的影响.
The finite difference time-domain (FDTD) method was used to simulate the coupling process between the microwave pulse and the aperture array rectangular cavity. When the long side of the aperture in the aperture array is perpendicular to the direction of the incident electric field, The distribution of the electric field at the center of each hole in the hole array during the coupling process of the rectangular cavity of the slot array was studied.The results show that in the hole parallel to the incident electric field, In the vertical direction of the incident electric field, the reinforcement effect at the center is the strongest, and the enhancement effect of the pore field is from the center to the center Symmetrical weakening on both sides.At the same time, the influence of the number of holes in the hole array and the spacing on the field enhancement effect and the coupling field distribution in the cavity were discussed.