半导体低维结构材料,如量子线(点)材料,由于其特殊的电子结构,在新一代光电子、微电子器件中有着重要的应用价值。本文对应变自组装InP基量子线(点)材料的生长制备、光学和电学特性及其在半导体激光器、红外探测器及其他光电子和微电子器件中的应用进行了综述,指出了目前需要改进的一些方面,并提出了一些相应的解决途径。 Low-dimensional semiconductor materials, such as quantum wire (point) materials, due to its special electronic structure, in the new generation of optoelectronics, microelectronic devices has an important application value. In this paper, the growth preparation, optical and electrical properties of strain self-assembled InP-based quantum wire (dot) materials and their applications in semiconductor lasers, infrared detectors and other optoelectronic and microelectronic devices are reviewed. Some aspects, and put forward some corresponding solutions.