论文部分内容阅读
采用扫描隧道显微镜 (STM )在 3 phenyl 1 ureidonitrile (PUN)有机单体薄膜上进行了超高密度信息存储的研究 .通过在STM针尖和高定向裂解石墨 (HOPG)衬底之间施加一系列的电压脉冲 ,在薄膜上写入了一个稳定的 5× 6信息点阵 ,信息点的大小是 0 8nm .电流 电压 (I V)曲线表明 ,施加电压脉冲前后薄膜的导电性质发生了变化 .信息点的写入机制可能是强电场作用下引发的PUN分子的局域聚合 ,从而导致薄膜由高电阻态向低电阻态转变 .
Ultra-high density information storage was performed on a 3 phenyl 1 ureidonitrile (PUN) organic thin film using a scanning tunneling microscope (STM). By applying a series of Voltage pulse, a stable 5 × 6 information dot matrix is written on the film, the size of the information dot is 0 8nm.The curve of current voltage (IV) shows that the conductivity of the film changes before and after the voltage pulse is applied. The write mechanism may be the local polymerization of PUN molecules induced by a strong electric field, resulting in the film transition from a high resistance state to a low resistance state.