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功率半导体公司——国际整流器公司(IR)9月推出了超小体积的控制和同步MOSFET芯片组,适用于必须达到小体积、高效率和最大导热性能要求的现有及新一代VRM10.x大电流同步降压转换器。最新IRF6608控制MOSFET的典型通态电阻 (RDS(on))为8.5mW,IRF6618同步MOSFET的典型通态电阻则为
Power semiconductor company International Rectifier (IR) introduced its ultralow-size control and synchronous MOSFET chip set in September for the existing and next-generation VRM10.x devices that must meet the needs of small size, high efficiency and maximum thermal conductivity Current synchronous buck converter. The typical on-state resistance (RDS (on)) of the latest IRF6608 control MOSFET is 8.5mW and the typical on-state resistance of the IRF6618 synchronous MOSFET is