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从电路负载方面考虑,将二级平板式碳纳米管场发射结构看做一个电容和可变电阻的并联结构。根据测试数据计算出电容值在皮法级,可变电阻在兆欧到千欧变化。通过电路仿真,分析了此结构在脉冲式下的负载特性。以此得出在脉冲前沿和后沿产生尖峰的原因。根据仿真结构提出增加RLC和二极管来消除尖峰的方法。实验证明,整体负载特性的改变使得发生发射结构上的脉冲尖峰基本得到消除。
From the circuit load considerations, the two flat carbon nanotube field emission structure as a capacitor and variable resistance of the parallel structure. According to the test data to calculate the capacitance value in the picofarad, variable resistance changes in megohms to thousands of ohms. Through the circuit simulation, this paper analyzes the load characteristics of this structure in pulsed mode. This leads to the pulse leading and trailing edge spike causes. According to the simulation structure proposed to increase the RLC and diode to eliminate spikes. Experiments show that the overall load characteristics of the changes made the launch of the structure of the pulse peak basically eliminated.