空间应用短波红外InGaAs探测器的性能不断提高,对辐照损伤越来越敏感。通过实时测试的方法,研究了不同剂量和不同剂量率的γ辐照对晶格匹配In0.53Ga0..47As探测器电流-电压特性的影响。发现在反向偏压下,辐照在器件中引起的光电流约为2nA。辐照还会在器件引入累积损伤,导致器件的暗电流增加,并且在辐照结束后的十几分钟内不会发生恢复。当剂量率一定时,器件暗电流随着辐照剂量的增加而增大,但增大的速度趋于变缓。当总剂量一定时,器件接受的辐照剂量率越大,其暗电流的增加越多。 Spatial Applications Short-wave infrared InGaAs detectors continue to improve their performance and are more and more sensitive to radiation damage. Through the real-time test method, the effects of γ-irradiation at different dose rates and dose rates on the current-voltage characteristics of lattice-matched In0.53Ga0..47As detectors were studied. Under reverse bias, the photocurrent induced in the device by the irradiation was found to be about 2 nA. Irradiation can also introduce cumulative damage to the device, resulting in an increase in the dark current of the device and no recovery within ten minutes after the irradiation has ended. When the dose rate is constant, the device dark current increases with the irradiation dose, but the increasing speed tends to slow down. When the total dose is constant, the greater the radiation dose rate the device receives, the more the dark current increases.