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分别采用溶胶-凝胶和射频磁控溅射的方法制备了La0.67Sr0.33CuxMn1-xO3(x=0.05,0.10和0.15)系列块材和薄膜,研究了Cu部分替代对薄膜光诱导特性的影响.实验结果表明随着Cu掺杂量的增加,薄膜的金属-绝缘转变温度向低温方向移动,且导电性降低.在金属相激光作用诱导电阻增大.光致电阻相对变化极大值随着Cu含量的增加而增大,当x=0.15时,光致电阻相对变化极大值达到58.3%,分析可能是由激光辐照诱导电子束缚于CuO2链外的局域态和晶格效应共同作用的结果.
The series of La0.67Sr0.33CuxMn1-xO3 (x = 0.05, 0.10 and 0.15) bulk and thin films were prepared by sol-gel and RF magnetron sputtering respectively. The effects of partial Cu substitution on the light induced properties of the films were investigated The experimental results show that with the increase of Cu doping, the metal-insulator transition temperature of film decreases to low temperature and the electrical conductivity decreases, and the induced resistance of metal thin film increases with the increase of Cu doping. When the content of Cu increases, the relative maximum value of photoresistance reaches 58.3% when x = 0.15. The analysis may be due to the interaction between the localized state and the lattice effect induced by laser irradiation outside the CuO2 chain the result of.