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由于CMOS晶体管的特征尺寸急速的缩放,CMOS晶体管的参数不断改进,使得最新CMOS晶体管获得的噪声系数足够低到足以应用到无线电天文学,因此,在本研究课题中选用CMOS晶体管。目前的低噪声放大器的最小噪声系数是在室温环境下,通过宽带CMOS低噪声放大器的功率匹配来获得。在本研究课题中,CMOS低噪声放大器以共源共栅极结构为基本拓扑结构,主要研究LNA的几种常用的噪声系数优化方法。通过建立小信号模型,对LNA的噪声系数进行分析,得出相应的表达式。
Due to the rapid scaling of CMOS transistor feature sizes, the parameters of CMOS transistors are continuously improving, making the noise figure obtained by the latest CMOS transistors low enough to be applied to radio astronomy. Therefore, CMOS transistors have been chosen for this research project. The minimum noise figure of current LNAs is obtained by power matching a wideband CMOS LNA at room temperature. In this research topic, the CMOS low-noise amplifier uses a common-source common-gate structure as its basic topology, and mainly studies several commonly used noise figure optimization methods for LNAs. Through the establishment of small signal model, the noise figure of LNA is analyzed and the corresponding expression is obtained.