论文部分内容阅读
基于LTCC厚薄膜混合基板的MCM-C/D多芯片组件技术,对LTCC技术和薄膜技术进行优势互补,兼具LTCC技术和薄膜技术的优点,可满足电子整机高频、宽带的应用需求。为了制备满足薄膜工艺布线的LTCC多层基板,研究了层压压力和烧结温度对A6-M LTCC多层基板致密性的影响。研究结果表明,层压压力对致密性的影响不明显,而烧结温度对LTCC的致密性有明显的影响。875℃烧结的基板试样的致密性最好,烧结温度较低,基板表现为欠烧,烧结温度过高,则表现为过烧结。按照优化工艺制备的LTCC基板,抛光后粗糙度Ra值达到10~15nm,可初步满足薄膜工艺布线的要求,基板表面薄膜工艺单层布线的最小线宽线间距为20微米。
Based on LTCC thick film hybrid substrate MCM-C / D multi-chip component technology, LTCC technology and thin film technology complement each other, both the advantages of LTCC technology and thin film technology to meet the application requirements of high frequency and broadband electronic machine. In order to fabricate the LTCC multi-layer substrate that meets the thin film technology routing, the effects of the lamination pressure and sintering temperature on the densification of the A6-M LTCC multi-layer substrate were investigated. The results show that the effect of lamination pressure on the densification is not obvious, while the sintering temperature has a significant effect on the densification of LTCC. The sample sintered at 875 ℃ had the best densification, the sintering temperature was lower, the substrate showed under-burning, and the sintering temperature was too high, then it showed over-sintering. According to the LTCC substrate prepared by the optimized process, the roughness Ra value after polishing reaches 10-15 nm, which can initially meet the requirements of the film process wiring. The minimum line-to-line spacing of the single layer wiring on the substrate surface film process is 20 microns.