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本文对磷离子能量在0.5—7.5MeV、剂量在2.0×10~(12)—1.0×10~(13)/cm~2范围内注入硅中的载流子剖面进行了研究,发现在此条件下,n型磷载流子剖面是由两个只有不同偏差σ_(tront)(σ前)和σ_(back)(σ后)的高斯分布相连接组成的。根据实验所得剖面特性,提出了多次迭加形成平坦剖面的方法。用这种方法结合SiO_2膜屏蔽和调整注入离子能量、剂量,能够获得各种有特殊要求的载流子浓度剖面。为了得到好的可控性和可重复性,采用了瞬态退火技术。透射电镜分析表明:在我们所用退火条件下,剩余缺陷并未出现。这种迭加注入已应用于特种器件研制中,试制出的产品获得令人满意的结果。
In this paper, the carrier profile of Si implanted in the range of 0.5-7.5MeV and the dose of 2.0 × 10-12 (-1.0 × 10 ~ (13) / cm ~ 2 was studied. It is found that under this condition , The n-type phosphorus carrier profile is composed of two Gaussian distributions with only different truncations (before σ) and σ back (after σ). According to the experimentally obtained profile characteristics, a method of forming a flat profile by multiple superimpositions is proposed. In this method combined with the SiO_2 film shielding and adjusting the energy and dose of ion implantation, we can obtain a variety of special requirements of the carrier concentration profile. In order to get good controllability and repeatability, the use of transient annealing technology. Transmission electron microscopy analysis showed that the remaining defects did not appear under the annealing conditions we used. This superposition of implants has been used in the development of specialty devices, and the prototypes produced satisfactory results.