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用薛定谔方程和泊松方程自洽计算的方法研究了Al0.75Ga0.25N/GaN对称双量子阱(DQWs)中子带间跃迁(ISBT)的波长和吸收系数对中间耦合势垒高度、中间耦合势垒宽度、势阱宽度和势垒掺杂浓度的依赖关系.研究发现,第一奇序子带S1ood与第二偶序子带S2even ISBT波长随着中间耦合势垒高度的降低而变短.当中间耦合势垒高度高于0.62eV时,S1odd-S2even ISBT吸收系数随着中间耦合势垒的降低而增加.当减小AlxGa1-xN/GaN的DQWs中间耦合势垒宽度时,S1odd-S2even ISBT波长将变短,其吸收系数变大.另一方面,当对称DQWs的势阱宽度大于1.9nm时,S1odd-S2even ISBT波长随着势阱的变窄而减小,S1odd-S2even ISBT吸收系数随着势阱的变窄而增加.当势垒中的掺杂浓度小于1018/cm3时,S1odd-S2even ISBT波长基本不随掺杂浓度变化,而吸收系数随掺杂浓度的增加而增加.这些结果对于利用DQWs实现工作于光纤通信波段超快的、基于三能级或四能级系统的双色光电子器件的应用具有指导意义.
The Schrödinger equation and the Poisson equation are used to calculate the inter-subband transition (ISBT) wavelength and absorption coefficient of Al0.75Ga0.25N / GaN symmetric double quantum wells (DQWs) The width of the barrier, the width of the potential well, and the doping concentration of the barrier, the wavelength of the first odd-order subband S1ood and the second even-order sub-band S2even ISBT becomes shorter as the height of the intermediate coupling barrier decreases When the intermediate coupling barrier height is higher than 0.62eV, the absorption coefficient of S1odd-S2even ISBT increases with the decrease of the intermediate coupling barrier.When the width of DQWs intermediate coupling barrier of AlxGa1-xN / GaN is reduced, the S1odd-S2even ISBT wavelength On the other hand, when the well width of symmetric DQWs is larger than 1.9 nm, the S1odd-S2even ISBT wavelength decreases with the decrease of the potential well, and the S1odd-S2even ISBT absorption coefficient decreases with the increase of When the doping concentration in the barrier is less than 1018 / cm3, the S1odd-S2even ISBT wavelength does not change with the doping concentration, but the absorption coefficient increases with the doping concentration. DQWs work in the optical fiber communication band ultra-fast, It has a three-level guidance on the application of optoelectronic devices or two-color four-level system.