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概括介绍了铁电薄膜的发展过程，分析了不同制备方法的优缺点，指出了在制备中需要考虑的主婴问题，给出了铁电薄膜基本参数、物化结构性能、物理性质等的表征方法，讨论了铁电薄膜在热释电探测、光开关、随机存取存储器等方面的应用，最后简单介绍了我国有关单位铁电薄膜的研究情况．
The development process of ferroelectric thin films is introduced in detail. The advantages and disadvantages of different preparation methods are analyzed. The main problem of the main baby which needs to be considered in the preparation is pointed out. The basic parameters of ferroelectric thin films, physical and chemical properties, physical properties and so on are given , Discusses the application of ferroelectric thin film in pyroelectric detection, optical switch, random access memory and so on. Finally, the research situation about ferroelectric thin film in China is briefly introduced.