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研究了磁控溅射法制备的复合绝缘层结构的有机薄膜晶体管。该器件是以酞菁铜(CuPc)作为有源层,SiO2/Si3N4/SiO2复合绝缘层和单层SiO2为绝缘层来进行对比研究的。结果显示与单层SiO2绝缘层的器件相比,具有复合绝缘层的器件结构能有效改进有机薄膜晶体管的性能。同时发现,不同厚度的SiO2/Si3N4/SiO2复合绝缘层对晶体管的性能也有影响,绝缘层太厚,感应电流小;绝缘层太薄,器件容易被击穿。
The organic thin film transistor with composite insulating layer structure prepared by magnetron sputtering was studied. The device is based on copper phthalocyanine (CuPc) as the active layer, SiO2 / Si3N4 / SiO2 composite insulating layer and single layer of SiO2 as insulation layer for comparative study. The results show that the device structure with the composite insulating layer can effectively improve the performance of the organic thin-film transistor compared with the single-layer SiO2 insulating layer device. Also found that different thickness of SiO2 / Si3N4 / SiO2 composite insulating layer on the performance of transistors also have an impact, the insulating layer is too thick, the induction current is small; the insulating layer is too thin, the device is easy to breakdown.