PIN光探测器是光纤通信系统和网络中的关键器件。量子效率和响应带宽是衡量光探测器性能的重要指标,并且这两个参数都与器件的吸收层密切相关。为了提高光探测器的性能,提出了一种新型双吸收层光探测器(即PINIP结构),利用侧腐蚀工艺减小双吸收层光探测器吸收层的结面积。对其性能进行了理论研究,结果表明该器件的量子效率达到了93%,同时响应带宽达到了26GHz,比传统结构的双吸收层光探测器提高了44%。 PIN photodetectors are the key components in fiber optic communications systems and networks. Quantum efficiency and response bandwidth are important indicators of the performance of a photodetector, and both are closely related to the absorber layer of the device. In order to improve the performance of the photodetector, a new dual-absorption layer photodetector (PINIP structure) is proposed to reduce the junction area of ​​the absorption layer of the double-absorption photodetector using a side-etching process. A theoretical study of its performance shows that the device achieves a quantum efficiency of 93% and a response bandwidth of 26GHz, which is 44% higher than that of the conventional double-absorption photodetector.