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由成都半导体材料厂、西南反应堆研究设计院和成都整流器厂联合举办的高通量堆中子嬗变掺杂(NTD)技术总结会, 于5月25日至5月28日在西南反应堆研究设计院召开。参加会议的有来自全国各地有关单位的四十四名代表。会上,代表们听取了主办单位所作的有关原始单晶制备、中子嬗变掺杂技术和制成的 Kp200A 晶闸管性能测试结果等四份报告。会议期间与会代表参观了高通量反应堆和 NTD 有关设备。讨论中,代表们对利用
High-throughput reactor neutron transmutation doping (NTD) technology summing-up conference jointly held by Chengdu Semiconductor Materials Factory, Southwestern Reactor Research and Design Institute and Chengdu Rectifier Factory was held on May 25 to May 28 at Southwestern Reactor Research and Design Institute Held. Attending the meeting were 44 delegates from relevant units across the country. At the meeting, the delegates listened to four reports made by the organizer on the preparation of original single crystal, the technology of neutron transmutation doping and the performance test result of Kp200A thyristor made. During the meeting, participants visited high-throughput reactors and NTD related equipment. During the discussion, delegates made use of it