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研究了MN -PPV薄膜的光致发光和电致发光特性。结果表明 ,单层器件中的电致发光峰值位置与所加电压无关 ;在双层器件结构 (ITO/MN -PPV/Alq3/Al)中 ,当Alq3层很薄(小于或等于 10nm)时 ,仅看到MN -PPV的发光 ;当Alq3的厚度为 2 0nm时 ,可看到Alq3的特征发光 ,但Alq3的发光峰值强度与MN -PPV的发光峰值强度之比随电压增大而下降 ;当Alq3的厚度为 30nm时 ,Alq3的发光峰值强度与MN -PPV的发光峰值强度之比随电压增大而增大 ,并最终达到某一数值。根据能带理论和电荷对势垒界面的隧穿特性 ,指出这是由于器件中电场的重新分布和电场作用下电荷遂穿势垒界面综合作用的结果。
The photoluminescence and electroluminescence properties of MN-PPV films were investigated. The results show that the peak position of electroluminescence in a single-layer device is independent of the applied voltage. When the Alq3 layer is very thin (less than or equal to 10 nm) in a two-layer device structure (ITO / MN -PPV / Alq3 / Al) Only the luminescence of MN-PPV was observed. When the thickness of Alq3 was 20 nm, the characteristic emission of Alq3 was observed. However, the ratio of the emission peak intensity of Alq3 to the emission peak intensity of MN-PPV decreased with increasing voltage. When the thickness of Alq3 is 30 nm, the ratio of the emission peak intensity of Alq3 to the emission peak intensity of MN-PPV increases as the voltage increases, and finally reaches a certain value. According to the band theory and charge tunneling characteristics of the barrier interface, it is pointed out that this is due to the redistribution of the electric field in the device and the result of the combined effect of the charge tunneling barrier interface under the action of the electric field.