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近年来，由于砷化镓集成电路（GaAsIC）的高速发展，对高质量的SI－GaAs单晶的要求越来越高，现已成为GaAsIC制造技术的关键之一。电子部南京电子器件研究所依靠自己的力量，在过去成功经验的基础上，自筹资金自行设计制造了JW0018型新一代高压单晶炉，在国内首先使用了三温区
In recent years, due to the rapid development of GaAsIC, the demand for high quality SI-GaAs single crystal is getting higher and higher, and it has become one of the key technologies for GaAsIC manufacturing. Electronic Institute of Nanjing Institute of Electronics rely on their own strength in the past based on successful experience, self-financing their own design and manufacture of a new generation of JW0018 high-pressure single crystal furnace, the first domestic use of the three temperature zones