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采用射频等离子体增强化学气相沉积(rf-PECVD)技术,在玻璃和硅衬底上沉积微晶硅(μc-Si:H)薄膜。利用拉曼光谱、AFM和电导率测试对不同射频功率下沉积的薄膜的结构特性及光电性能进行分析。研究表明:随着射频功率的增加,薄膜的晶化率和沉积速率也随之增加,而当射频功率增加到一定的程度,晶化率和沉积速率反而减小。薄膜的暗电导率与晶化率的变化情况相对应。
The microcrystalline silicon (μc-Si: H) thin films were deposited on glass and silicon substrates by radio frequency plasma-enhanced chemical vapor deposition (rf-PECVD). Raman spectroscopy, AFM and conductivity testing were used to analyze the structural and optoelectronic properties of thin films deposited at different RF power levels. The results show that with the increase of RF power, the crystallization rate and deposition rate of the films also increase. When the RF power is increased to a certain extent, the crystallization rate and the deposition rate decrease. The dark conductivity of the film corresponds to the change of the crystallization rate.