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采用高压电子显微镜（ＨＶＥＭ）的原位观察技术，在１ＭＶ加速电压和室温至６５０℃加热条件下，观察了氢离子注入硅片中缺陷层的变化。在５００℃以下，氢离子注入缺陷层基本没有变化，在６５０℃保温时，缺陷的密度逐渐降低，样品中薄区域部分的缺陷在保温２０ｍｉｎ后消失，而厚区域部分在保温４０ｍｉｎ后仍存有部分缺陷，说明缺陷的变化与样品厚度有关。用氢的扩散理论讨论了这一现象，提出氢可能是以Ｈ２分子的形式扩散的
The changes of defect layer in hydrogen ion implanted silicon wafers were observed under the condition of 1 MV accelerating voltage and heating from room temperature to 650 ℃ by using in situ observation of high voltage electron microscope (HVEM). At 500 ℃, there was almost no change in hydrogen ion implantation defect layer, and the density of defects gradually decreased when the temperature was maintained at 650 ℃. The defects in the thin region of the sample disappeared after 20min incubation while the thick region still remained after 40min incubation Part of the defects, indicating changes in defects and the thickness of the sample. This phenomenon is discussed with the diffusion theory of hydrogen, suggesting that hydrogen may be diffused as H2 molecules