与平面硅相比,黑硅对0.25~2.5μm波长光具有高吸收特性。为了提高硅光敏二极管的近红外灵敏度和响应时间,采用金属辅助刻蚀在光敏二极管探测器背面制作了黑硅微结构。在1 064nm波长,探测器红外响应达到0.518A/W,比常规探测器量子效率提高了65%。 Compared with planar silicon, black silicon has a high absorption of 0.25 ~ 2.5μm wavelength light. In order to improve the NIR sensitivity and response time of the silicon photodiode, a black-silicon microstructure was fabricated on the back of the photodiode detector by metal-assisted etching. At 1 064nm wavelength, the infrared response of the detector reaches 0.518A / W, which is 65% higher than the quantum efficiency of the conventional detector.