一、引言为了满足超高速计算机、高速数据处理和卫星通信等高性能电子系统的迫切需要,人们一直在寻求和开发新的超高速和微波器件。利用异质界面二维电子气(2DEG)高迁移率特性的高电子迁移率晶体管(HEMT)及其IC已显示出巨大的发展潜力和广阔的应用前景。因而成为最有希望的候选者之一。以增强型(E型)HEMT为开关管、耗尽型(D型)HEMT(或饱和电阻)为负载的E/D(或E/R)型直接耦合场效应晶体管逻辑 I. INTRODUCTION In order to meet the urgent need of high-performance electronic systems such as ultra-high speed computers, high-speed data processing and satellite communications, people have been seeking and developing new ultra-high speed and microwave devices. High electron mobility transistors (HEMTs) and their ICs that utilize 2DEG high-mobility heterogeneous interfaces have shown tremendous potential for growth and promising applications. Thus becoming one of the most promising candidates. E / D (or E / R) Directly Coupled Field-Effect Transistor Logic with Enhanced (Type E) HEMTs as Switching Regulators, Depleted (Type D) HEMTs