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2013年9月5日讯:Vishay Intertechnology,Inc.(VSH)宣布,扩充其采用超小PowerPAK SC-70封装的TrenchFET Gen III P沟道功率MOSFET。今天推出的Vishay Siliconix MOSFET是为在便携式电子产品中节省空间及提高效率而设计的,占位面积只有2 mm×2 mm,在—4.5 V和—10 V栅极驱动下的导通电阻是—12 V、—20 V和—30 V(12 V VGS和20 V VGS)器件中最低的。
September 5, 2013: Vishay Intertechnology, Inc. (VSH) announced the expansion of its TrenchFET Gen III P-channel power MOSFET in an ultra-small PowerPAK SC-70 package. Today’s Vishay Siliconix MOSFETs are designed to save space and increase efficiency in portable electronics with a footprint of only 2 mm × 2 mm. The on-resistance at gate drive of -4.5 V and -10 V is - 12 V, -20 V, and -30 V (12 V VGS and 20 V VGS) devices.