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用金属有机物分解 (MOD)以及sol gel方法制备了SrBi2 Ta2 O9(SBT)铁电薄膜。经测量在 75 0℃晶化的SBT薄膜具有很好的铁电性能。通过对SBT样品极化反转过程进行测试 ,得到了外加电压 ( 0 .5～ 5V)与SBT薄膜的开关时间 ( 10 0～6 0 0ns)及极化反转电荷的关系。并研究了不同气氛下退火对SBT铁电薄膜开关特性的影响
SrBi2 Ta2 O9 (SBT) ferroelectric thin films were prepared by metal organic decomposition (MOD) and sol gel method. The SBT thin films crystallized at 75 ℃ have good ferroelectric properties. The relationship between the applied voltage (0.5 ~ 5V) and the switching time (10 0 ~ 600ns) and polarization reversal charge of SBT thin films was obtained by testing the polarization reversal process of SBT samples. The effects of annealing on the switching characteristics of SBT ferroelectric thin films under different atmospheres were also studied