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为提高940nm半导体激光器抗灾变性光学损伤(COD)能力,采用无杂质空位量子阱混杂技术制备了带有无吸收窗口的940nm GaInP/GaAsP/GaInAs半导体激光器。借助光致发光光谱分析了退火温度和介质膜厚度对GaInP/GaAsP/GaInAs单量子阱混杂的影响;通过电化学电容-电压(EC-V)方法检测了经高温退火后激光器外延片的掺杂浓度分布的变化情况。实验发现,在875℃快速热退火条件下,带有磁控溅射法制备的200nm厚的SiO2盖层样品发生蓝移达29.8nm,而电子束蒸发法制备的200nm厚TiO2样品在相同退火条件下蓝移量仅为4.3nm。两种方法分别对蓝移起到很好的促进和抑制作用。将优化后的条件用于带有窗口结构的激光器器件制备,其抗COD能力提高了1.6倍。
In order to improve the ability of disaster-resistant optical damage (COD) of 940nm semiconductor laser, a 940nm GaInP / GaAsP / GaInAs semiconductor laser with no absorption window was prepared by impurity-free quantum well hybridization. The effects of annealing temperature and dielectric film thickness on the GaInP / GaAsP / GaInAs single-quantum well were analyzed by photoluminescence (PL) spectroscopy. The doping of the epitaxial wafer after high temperature annealing was examined by electrochemical capacitance-voltage Concentration distribution changes. It was found that the 200nm-thick SiO2 capping layer prepared by magnetron sputtering was blue-shifted to 29.8nm at 875 ℃, while the 200nm-thick TiO2 sample prepared by electron beam evaporation was annealed under the same annealing conditions Under the blue shift of only 4.3nm. The two methods play a good role in promoting and inhibiting blue shift respectively. The optimized conditions for the preparation of laser devices with window structure, the anti-COD ability increased by 1.6 times.