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采用高温煅烧法成功制备了块状g-CsN4和g-C3N4纳米材料,利用XRD、SEM、FT-IR、UV-Vis、PL等方法对材料进行表征,并研究其降解头孢曲松钠的光催化活性和机理.当降解时间为120 min、头孢曲松钠质量浓度为10 mg/mL、半导体材料的加入量为0.1g时,块状g-C3N4和g-C3N4纳米材料的降解率分别为67.74％和85.84％,g-C3N4纳米材料的光催化活性高于块状g-C3N4;对催化机制研究发现,空穴(h+)和羟基自由基(·OH)起主要催化作用,超氧自由基(·O21-)次之.对g-C3N4纳米材料的稳定性进行评价,3次循环催化后材料稳定性良好.“,”The overuse and misuse of ceftriaxone sodium is a serious issue threating human and ecological health.It is urgent to explore an effective way to eliminate antibiotic residues from the aquatic environment.Bulk g-C3N4 and nanoscale g-C3N4 photocatalytic materials are prepared successfully via high temperature calcination method,and both are characterized by XRD,SEM,FT-IR,UV-Vis and PL,etc.Photocatalytic degradation of ceftriaxone sodium over the asprepared g-C3N4 materials under visible light irradiation is carried out to evaluate the catalytic activity and investigate the catalytic mechanism.The results indicate that the degradation rates over bulk g-C3N4 and g-C3N4 nanosheets are 67.74％ and 85.84％,respectively when the degradation under visible light irradiation lasts for 120 min,the mass fraction of ceftriaxone sodium is 10 mg·mL-1 and the dosage amount of semi-conductive materials is 0.1 g.The g-C3N4 nanosheets shows much higher photocatalytic activity than bulk g-C3N4.It is found through exploring the catalytic mechanism that h+ and · OH play major roles in catalytic actions,·O2-comes next.Moreover,the as-prepared g-C3N4 nanosheets samples are of high stability after three times of uses.