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利用卢瑟福背散射/沟道技术对在蓝宝石衬底上用金属有机化学气相沉积方法生长的有GaN缓冲层(>2μm)的一系列不同Al和In含量的AlInGaN薄膜进行组分及结晶品质的测量;并结合高分辨X射线衍射技术,通过对AlInGaN的对称(0002)面,及非对称(1015)面的θ—2θ扫描及倒空间扫描,可以精确测定AlInGaN外延层的晶格常数及水平和垂直方向的应变.实验结果表明AlInGaN薄膜中不同含量Al和In对其应变有较大的影响,结合Vegard定理,对这一现象给出了理论的解释.
A series of AlInGaN films with different Al and In contents with GaN buffer layers (> 2 μm) grown by metal organic chemical vapor deposition on sapphire substrates were subjected to compositional and crystal quality using Rutherford backscattering / channeling techniques And the combination of high-resolution X-ray diffraction, the lattice parameters of the AlInGaN epitaxial layer can be accurately determined by scanning the symmetry (0002) surface of the AlInGaN and the θ-2θ scanning of the asymmetric (1015) Horizontal and vertical strain.The experimental results show that the AlInGaN films with different contents of Al and In have great influence on the strain, and the Vegard theorem is given to explain the phenomenon theoretically.