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采用等离子体增强原子层沉积技术在Si衬底上制备了HfO2栅介质薄膜。为了抑制HfO2薄膜与Si衬底间界面层的生长,首先对Si衬底进行了原位的氧等离子体和氨等离子体预处理,高分辨透射电子显微镜被用来表征HfO2薄膜和界面层的厚度及形态。当氧等离子体和氨等离子体的功率分别为75 W和150 W时,界面层的生长得到了有效控制,厚度为0.83 nm,X射线光电子能谱分析表明该界面层主要由具有较高介电常数的HfSiON组成。MIS电容被用来研究HfO2薄膜的电学特性,当HfO2薄膜物理厚度为3 nm时,等效栅氧厚度为1.04 nm,电容回滞大小为35.8 mV。漏电特性曲线显示,在距离平带电压为1 V的位置处,漏电流密度仅为0.64!A/cm2。
HfO2 gate dielectric films were prepared on Si substrate by plasma enhanced atomic layer deposition. In order to suppress the growth of the interfacial layer between the HfO2 film and the Si substrate, oxygen plasma and ammonia plasma pretreatment were firstly performed on the Si substrate. High-resolution transmission electron microscopy was used to characterize the thickness of the HfO2 film and the interfacial layer And form. The growth of the interfacial layer was effectively controlled at a power of oxygen plasma and ammonia plasma of 75 W and 150 W, respectively, and the thickness was 0.83 nm. The X-ray photoelectron spectroscopy analysis showed that the interfacial layer mainly consisted of high dielectric HfSiON constants. The MIS capacitance was used to study the electrical properties of HfO2 films. The equivalent gate oxide thickness was 1.04 nm and the hysteresis capacitance was 35.8 mV when the physical thickness of HfO2 films was 3 nm. The leakage curve shows that the leakage current density is only 0.64 A / cm2 at a distance of 1 V from the flat band.