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与传统的投影曝光微细加工方法相比 ,激光直写具有高柔性、低成本和胜任三维微型结构加工的优点。采用非稳腔的聚焦准分子激光 ( Kr F,λ=2 4 8nm)对单晶硅材料进行直接刻蚀 ,从微结构刻蚀的形状尺寸及加工过程的热效应等方面研究了准分子激光直接刻蚀单晶硅的加工特性。重点考察了加工中的热效应 ,研究表明准分子激光与被加工材料的相互作用并非完全基于非热机理 ,加工过程亦有热作用参与 ,进一步提出了准分子激光刻蚀加工的“热影响区”概念用以评价和解释准分子激光的“冷加工”特性。同时观察分析了脉冲激光对硅基底造成的破坏现象 ,讨论了冲击作用的成因。
Compared with the traditional micro-processing method of projection exposure, laser direct writing has the advantages of high flexibility, low cost and capable of three-dimensional micro-structure processing. Single crystal silicon materials were directly etched by using a non-stationary cavity focused excimer laser (Kr F, λ = 248nm). The effects of the excimer laser direct Etch monocrystalline silicon processing characteristics. Focusing on the thermal effects during processing, the study shows that the interaction between the excimer laser and the material to be processed is not based solely on the non-thermal mechanism, and the thermal process is also involved in the process. The “heat affected zone” of the excimer laser etching process is further proposed. Concept to evaluate and explain the “cold working” nature of excimer lasers. At the same time, the damage caused by the pulsed laser to the silicon substrate was observed and analyzed. The causes of the impact were discussed.