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在电容测量的基础上研究了薄隧道氧化层在恒定Fowler-Nordheim(F-N)隧穿电流下的退化情况.这种退化是恒流应力和时间的函数,对恒流应力大小的依赖性更加强烈,隧道氧化层在F-N电流下的退化是注入电荷密度(Qinj)的函数.在较低Qinj下氧化层中发生正电荷俘获,在较高Qinj下发生负电荷俘获,导致栅压变化的反复.
Based on the capacitance measurements, the degradation of thin tunnel oxide under constant Fowler-Nordheim (FN) tunneling current is studied, which is a function of constant current stress and time, and is more dependent on the magnitude of constant current stress , The degradation of the tunnel oxide layer at FN current is a function of the injected charge density (Qinj). Positive charge trapping occurs in the oxide layer at lower Qinj and negative charge trapping at higher Qinj results in repeated gate-level variations.