The effect ofγ-ray irradiation on the SOT magnetic films and Hall devices

来源 :半导体学报:英文版 | 被引量 : 0次 | 上传用户：scg5252

【摘要】

：

Magnetoresistive random access memories(MRAMs)have drawn the attention of radiation researchers due to their potential high radiation tolerance.In particular,sp

【作者】

：

Tengzhi Yang Yan Cui Yanru Li

【机构】

：

KeyLaboratoryofMicroelectronicDevices&,IntegratedTechnology,UniversityofChineseofAcademySciences（

【出处】

：

半导体学报:英文版

【发表日期】

：

2021年2期

【关键词】

：

SOT-MRAM γ-ray irradiation TID effect anomalous Hall effect

【基金项目】

：

This work is financially supported by Strategic Priority Research Program of the CAS(Grant No.XDA18000000),Youth Innovation Promotion Association of CAS(Grant No.2015097).

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Magnetoresistive random access memories(MRAMs)have drawn the attention of radiation researchers due to their potential high radiation tolerance.In particular,spin-orbit torque MRAM(SOT-MRAM)has the best performance on endurance and access speed,which is c

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The effect ofγ-ray irradiation on the SOT magnetic films and Hall devices

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