论文部分内容阅读
对于Ｔａ/ＮｉＦｅ/Ｃｕ/ＮｉＦｅ/ＦｅＭｎ/Ｔａ自旋阀多层膜,Ｃｕ原子偏聚到ＮｉＦｅ/ＦｅＭｎ界面将导致自旋阀多层膜中ＮｉＦｅ/ＦｅＭｎ的交换耦合场Ｈｅｘ下降．然而,少量的表面活化原子Ｂｉ被沉积到Ｃｕ层和被钉扎ＮｉＦｅ层之间,Ｃｕ原子在ＮｉＦｅ/ＦｅＭｎ界面的偏聚可以被抑制:而且,更重要的是Ｔａ/ＮｉＦｅ/Ｃｕ/ＮｉＦｅ/ＦｅＭｎ/Ｔａ自旋阀多层膜中的交换耦合场Ｈｅｘ可以被有效地提高．
For the Ta / NiFe / Cu / NiFe / FeMn / Ta spin-valve multilayer films, the segregation of Cu atoms to the NiFe / FeMn interface leads to the decrease of the exchange coupling field NiFe / FeMn in the multilayered spin-valve membrane. However, a small amount of surface-activated atoms Bi are deposited between the Cu layer and the pinned NiFe layer, and the segregation of Cu atoms at the NiFe / FeMn interface can be suppressed: more importantly, Ta / NiFe / Cu / NiFe / The exchange coupling field Hex in the FeMn / Ta spin-valve multilayer film can be effectively increased.