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2016年8月29日,每年一次循例来为华为RF工程师讲课的Qorvo高级Fellow Bill Boesch在深圳接受了专访,他说:“4G、5G基站大功率射频(RF)元件市场正在发生变革,原有的占主导地位的LDMOS元件虽有成本较低的优势,但市场份额正在出现下滑态势,代之而起的是新兴的GaN元件,它因其能够节省更大功率的优势正在基站RF市场上快速增长。”他特别提到,5G现在频谱标准还没有定,有可能会选择4-5GHz或更高至毫米波频段。对于手机终端来说,如果5G频段在4-5GHz左右,GaAs RF应该还是主流,但如果最终选择8GHz以上频段,GaN RF元件就应该会成为主流
On August 29, 2016, Qorvo senior Fellow Bill Boesch, who teaches Huawei RF engineers once a year on an annual basis, gave an exclusive interview in Shenzhen. He said: “The market for high-power 4G and 5G base station RF components is undergoing changes. Some dominant LDMOS devices are gaining ground due to their lower cost but their market share is declining. Emerging GaN devices have replaced emerging GaN devices because of their potential for greater power savings in the base station RF market Rapid growth. ”He said in particular that the 5G spectrum standard is not yet set and may choose to be 4-5 GHz or higher up to the millimeter-wave band. For handsets, if the 5G band is around 4-5GHz, GaAs RF should still be the mainstream, but GaN RF components should become the mainstream if the band above 8GHz is finally selected