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The non-polar a-plane (1120) InxGa1-xN alloys with different indium compositions (0.074 ≤ x ≤ 0.555) were grown on r-plane (10(1)2) sapphire substrates by metalorganic chemical vapor deposition,and the indium compositions x are estimated from x-ray diffraction measurements.The in-plane orientation of the Inx Ga1- x N with respect to the r-plane substrate is confirmed to be [(1)100]sapphire|| [11(2)0]InxGa1-xN and [(1)101]sapphire|| [0001]InxGa1-xN.The effects of substrate temperature,reactor pressure and trimethylindium input flow on the indium incorporation and growth rate are investigated. The morphology of the a-plane InxGa1-xN is found to be significantly improved with the decreasing indium composition x and growth rate.Moreover,the in-plane anisotropic structural characteristics are revealed by high resolution x-ray diffraction employing azimuthal dependence,and the degree of anisotropy decreases with the increase of indium composition.