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由于离子注入机注入晶片的离子(如B、P、A等)数量及注入深度等均可严格控制,故比传统工艺优越得多。特别是在中、大规模集成电路及一些特殊用途器件生产中,已成为必不可少的工艺设备之一。 随着半导体工艺水平的不断提高,对离子注入机的扫描面积、注入剂量、均匀性、重复性等方面提出了更高的要求。根据目前半导体生产的实际需要,我们研制了一套检测离子剂量与均匀性的装置,供微控中束流离子注入机使用。该装置手动工作时,作离子剂量仪使用,剂量预置最大范围达1×10~(19)离子/厘米~2,
Since ion implanter into the wafer ions (such as B, P, A, etc.) the number and depth of injection can be strictly controlled, it is much superior than the traditional process. Especially in the large-scale integrated circuits and some special-purpose devices in the production, has become an indispensable process equipment. With the continuous improvement of the level of semiconductor technology, ion implanter scan area, the injection dose, uniformity, repeatability and so put forward higher requirements. According to the actual needs of the current semiconductor production, we developed a set of devices for detecting the dose and uniformity of ions for use in micro-ion beam ion beam implanters. When the device is manually operated, it is used as an ion dosimeter. The maximum dosage range is 1 × 10 ~ (19) ions / cm ~ 2,