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为研制高探测率D红外探测器,对器件所选用的碲镉汞、碲锡铅、锑化铟以及钽酸锂芯片材料的研磨和抛光技术,提出了很高的要求。因这些材料多属质软、易碎、强度极低的化合物半导体。为适应被磨芯片质软、易碎、低强度的特殊性质和制作器件的特殊要求,不仅对芯片要求磨、抛到厚达0.02～5mm,而且要防止研磨过程中碎片,加工后晶体表面接近无损伤,避免因加工而引起的晶格位错和变形。目前国内生产的通用研磨机很难满足这些要求。1979年以来,我们着手研制精密红外探
In order to develop a high detection rate D infrared detector, high-level requirements have been put forward for the grinding and polishing technologies of the selected devices such as HgCdTe, tellurium-tin-lead, indium antimonide and lithium tantalate chips. Because of these materials are mostly soft, brittle, low-intensity compound semiconductors. In order to meet the special requirements of the chip being soft, brittle and low strength and the special requirements of the device, not only the chip is required to be polished, the thickness is 0.02 to 5 mm, but also the chips in the grinding process and the crystal surface after processing are to be close No damage, to avoid the lattice dislocation caused by processing and deformation. The current domestic production of universal grinding machine is difficult to meet these requirements. Since 1979, we have started to develop precision infrared exploration