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双界面智能卡芯片静电放电(ESD)可靠性的关键是模拟前端(AFE)模块的ESD可靠性设计,如果按照代工厂发布的ESD设计规则设计,AFE模块的版图面积将非常大。针对双界面智能卡芯片AFE电路结构特点和失效机理,设计了一系列ESD测试结构。通过对这些结构的流片和测试分析,研究了器件设计参数和电路设计结构对双界面智能卡芯片ESD性能的影响。定制了适用于双界面智能卡芯片AFE模块设计的ESD设计规则,实现对ESD器件和AFE内核电路敏感结构的面积优化,最终成功缩小了AFE版图面积,降低了芯片加工成本,并且芯片通过了8 000 V人体模型(HBM)ESD测试。
The key to electrostatic discharge (ESD) reliability in dual-interface smart card ICs is the ESD reliability design of the analog front-end (AFE) module, which can be very large if designed in accordance with the ESD design rules issued by the foundry. Aiming at the structure and failure mechanism of dual interface smart card chip AFE circuit, a series of ESD test structures are designed. Through the chip and test analysis of these structures, the influence of device design parameters and circuit design structure on ESD performance of dual interface smart card chip is studied. Custom designed ESD design rules for dual interface smart card chip AFE module to optimize the area sensitive structure of the ESD device and AFE core circuit eventually narrowed the AFE layout area and reduced chip processing costs and the chip passed 8 000 V Human Body Model (HBM) ESD Test.