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本文研究了晶体管电荷控制概念的现状,同时确定了设计线路中有那些最重要的性能参数;并对参数的测量方法加以概述。这些参数是:收集极时间常数τ_c,饱和时间常数τ_s,“立刻需要的”、电流放大系数β_s,收集极电容的电荷 Q_v 和直流电流放大系数β。文中采取了一种方法来进行分析,其分析指出:参数随直流电流之变而变。文中还尽可能详细地分析了均匀基层晶体管,同时对基层杂质有斜度的晶体管也定性地加以研究。
This paper studies the status quo of the concept of transistor charge control, and at the same time determines the most important performance parameters in the design of the circuit; and gives an overview of the measurement of the parameters. These parameters are: collector time constant τ_c, saturation time constant τ_s, “immediately needed”, current amplification factor β_s, collector charge Q_v, and direct current amplification factor β. The paper takes a method for analysis, the analysis pointed out: the parameters change with the DC current change. The paper also analyzed as uniformly as possible the underlying transistors, while the grassroots impurities gradient transistors are also qualitatively studied.