多层圆片键合是实现三维垂直互连封装的重要工艺步骤。利用紫外辅助表面活化技术,实现了多层硅圆片的直接键合。实验将清洗后的硅圆片放置在紫外光下进行照射,经过3min的光照后显著提高了表面能,在不借助外力及电压的情况下,实现了自发性的预键合。通过红外透射观测键合界面,发现键合界面中心区无明显缺陷;对界面横断面的直接观测表明键合过渡层十分薄,证明了多层硅圆片已经结合成为一个整体,其键合工艺可应用于三维垂直通孔互连中。 Multi-layer wafer bonding is an important process step to achieve 3D vertical interconnect packaging. The use of UV-assisted surface activation technology, to achieve a multi-layer silicon wafer direct bonding. After the experiment, the cleaned silicon wafer was exposed to UV light and the surface energy was significantly increased after 3 min of light irradiation. Spontaneous prebonding was achieved without external force and voltage. Observation of the bonded interface by infrared transmission revealed no obvious defects in the central area of ​​the bonded interface; direct observation of the cross-section of the interface showed that the bonded transition layer was very thin, demonstrating that the multilayer silicon wafer had been integrated into one and the bonding process Can be used in 3D vertical through-hole interconnects.