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采用化学气相沉积法在硅衬底上生长二氧化锡(SnO2)纳米线,并对其进行热处理。扫描电子显微镜、X射线衍射仪和拉曼光谱测试分析表明所合成的SnO2纳米线为单一四方金红石相,且结晶性能良好。光致发光测试显示在576nm附近有明显的黄色发光峰,但在氧气氛环境退火处理后该发光峰逐渐减弱,表明576nm处的发光峰为氧空位缺陷引起的发光。同时,退火处理能有效提高材料的场发射性能,SnO2纳米线的最低开启和阈值电场分别约为4.6和6.2V/μm。
SnO2 nanowires were grown on silicon substrates by chemical vapor deposition and thermally treated. Scanning electron microscopy, X-ray diffraction and Raman spectroscopy analysis showed that the synthesized SnO2 nanowires were single tetragonal rutile phase with good crystallinity. The photoluminescence test showed obvious yellow emission peak around 576nm, but the luminescence peak decreased gradually after the annealing in oxygen atmosphere, which indicated that the luminescence peak at 576nm was caused by oxygen vacancy defect. Meanwhile, the annealing treatment can effectively improve the field emission properties of the material. The minimum on and threshold electric fields of SnO2 nanowires are about 4.6 and 6.2 V / μm, respectively.