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在功率晶体管中二次击穿继续是一个广泛讨论的课题。虽然横向热不稳定的模型足以说明正向偏置二次击穿,但不能说明反向偏置二次失效机理。热诱发和电诱发过程成功地说明了这个现象的某些方面。本文从试验和分析两方面研究反向偏置二次击穿的课题。可以看到在理论和实验之间符合得很好。本研究的结论认为雪崩注入是触发机构,而且雪崩注入引起的线状电流在大多数情况下能造成器件失效。也可以说,在线路一定的情况下,晶体管的反向偏置二次击穿电位可由单一的参数 V_P 来确定,V_P 是雪崩注入所需的电压。
Secondary breakdown in power transistors continues to be a topic of widespread discussion. Although the transverse thermal instability model is sufficient to illustrate the forward biased secondary breakdown, it fails to explain the reverse bias secondary failure mechanism. The thermal and electrical induction processes have successfully demonstrated some aspects of this phenomenon. This article from the test and analysis of two aspects of reverse bias secondary breakdown research. It can be seen that there is a good fit between theory and experiment. The conclusion of this study is that avalanche injection is the trigger mechanism, and the linear current caused by the avalanche injection can in most cases cause device failure. It can also be said that under certain circuit conditions, the reverse bias potential of the transistor can be determined by a single parameter V_P, which is the voltage required for avalanche injection.